Breaking the Current-Retention Dilemma in Cation-Based Resistive Switching Devices Utilizing Graphene with Controlled Defects

Abstract

Cation-based resistive switching (RS) devices, dominated by conductive filaments (CF) formation/dissolution, are widely considered for the ultrahigh density nonvolatile memory application. However, the current-retention dilemma that the CF stability deteriorates greatly with decreasing compliance current makes it hard to decrease operating current for memory application and increase driving current for selector application. By centralizing/decentralizing the CF distribution, this current-retention dilemma of cation-based RS devices is broken for the first time. Utilizing the graphene impermeability, the cation injecting path to the RS layer can be well modulated by structure-defective graphene, leading to control of the CF quantity and size. By graphene defect engineering, a low operating current (≈1 µA) memory and a high driving current (≈1 mA) selector are successfully realized in the same material system. Based on systematically materials analysis, the diameter of CF, modulated by graphene defect size, is the major factor for CF stability. Breakthrough in addressing the current-retention dilemma will instruct the future implementation of high-density 3D integration of RS memory immune to crosstalk issues.

Cation-based resistive switching (RS) devices are widely considered for memory and selector application in the one-selector-one-resistor (1S1R) scheme for the next-generation nonvolatile memory application. Here, centralizing/decentralizing the conductive filament distribution is proposed to break the current-retention dilemma of cation-based RS device by modulating the filament stability. Ultimately, this method helps to realize low-current memory and high On-state current selector for 1S1R array application.

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