In article number 1704796, Yi-Hsien Lee and co-workers report the synthesis of in-plane artificial lattices of monolayer multijunctions with multistep chemical vapor deposition (CVD) processes. With optimized parameters, atomically sharp interfaces are successfully achieved in the synthesis of the in-plane artificial lattices of these WS2/WSe2/MoS2 multijunctions at reduced growth temperatures. This synthesis method opens a new avenue toward low-dimensional channels and artificial lattices of diverse material genomes.
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