Effective Carrier-Concentration Tuning of SnO2 Quantum Dot Electron-Selective Layers for High-Performance Planar Perovskite Solar Cells

Abstract

The carrier concentration of the electron-selective layer (ESL) and hole-selective layer can significantly affect the performance of organic–inorganic lead halide perovskite solar cells (PSCs). Herein, a facile yet effective two-step method, i.e., room-temperature colloidal synthesis and low-temperature removal of additive (thiourea), to control the carrier concentration of SnO₂ quantum dot (QD) ESLs to achieve high-performance PSCs is developed. By optimizing the electron density of SnO₂ QD ESLs, a champion stabilized power output of 20.32% for the planar PSCs using triple cation perovskite absorber and 19.73% for those using CH₃NH₃PbI₃ absorber is achieved. The superior uniformity of low-temperature processed SnO₂ QD ESLs also enables the fabrication of ≈19% efficiency PSCs with an aperture area of 1.0 cm² and 16.97% efficiency flexible device. The results demonstrate the promise of carrier-concentration-controlled SnO₂ QD ESLs for fabricating stable, efficient, reproducible, large-scale, and flexible planar PSCs.

SnO₂ quantum dots (QDs) are synthesized by a simple and reproducible two-step low-temperature method, in which the carrier concentration of colloidal SnO² QDs is controlled. Planar perovskite solar cells with the efficiencies of 20.8% in small size (0.09 cm²), ≈19% in large size (1 cm²), and 16.97% for flexible devices with low-temperature processed SnO₂ QD electron-selective layers are obtained.

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