Flexible Gallium Nitride: Flexible Gallium Nitride for High-Performance, Strainable Radio-Frequency Devices (Adv. Mater. 47/2017)

In article number 1701838, Nicholas R. Glavin and co-workers describe the use of a series of flexible gallium nitride radio-frequency devices for power amplification of wireless signals at high frequencies for future wearable and conformal electronics. The flexible GaN, in this case, is realized through epitaxial lift-off using a 2D h-BN release layer and can accommodate strains up to 0.43% with performance rivaling that of rigid GaN materials.

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