Random Access Memory: Organic Ferroelectric-Based 1T1T Random Access Memory Cell Employing a Common Dielectric Layer Overcoming the Half-Selection Problem (Adv. Mater. 34/2017)

Organic ferroelectric random access memory (FeRAM) shows the advantages of durable data storage and nondestructive readout as nonvolatile memory in flexible electronics. In article number 1701907, Lang Jiang, Wenping Hu, and co-workers present a novel FeRAM cell with one selection transistor and one ferroelectric memory transistor (1T1T) sharing a common dielectric, making multiple dielectric handling unnecessary and simplifying 1T1T memory fabrication. This technique offers wide prospects for half-selection problem-free, flexible memory cell arrays.

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