Organic Thin-Film Transistors: UV–Ozone Interfacial Modification in Organic Transistors for High-Sensitivity NO2 Detection (Adv. Mater. 31/2017)

Ultra-sensitive OTFT-based NO₂ gas sensors implementing a simple, low-cost UV/ozone (UVO) activation of the TFT gate dielectric layer are fabricated, as discussed in article number 1701706 by Junsheng Yu, Tobin J. Marks, Antonio Facchetti and co-workers. UVO generates oxygen-containing functional groups which strongly bind the NO₂ molecules, which contributes to limit of detection of ≈400 ppb, and sensitivity approaches ≈200% and ≈160 000% for NO₂ concentrations of 1 ppm and 30 ppm, respectively.

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