Magnetic-Induced-Piezopotential Gated MoS2 Field-Effect Transistor at Room Temperature

Abstract

Utilizing magnetic field directly modulating/turning the charge carrier transport behavior of field-effect transistor (FET) at ambient conditions is an enormous challenge in the field of micro–nanoelectronics. Here, a new type of magnetic-induced-piezopotential gated field-effect-transistor (MIPG-FET) base on laminate composites is proposed, which consists of Terfenol-D, a ferroelectric single crystal (PMNPT), and MoS₂ flake. When applying an external magnetic field to the MIPG-FET, the piezopotential of PMNPT triggered by magnetostriction of the Terfenol-D can serve as the gate voltage to effectively modulate/control the carrier transport process and the corresponding drain current at room temperature. Considering the two polarization states of PMNPT, the drain current is diminished from 9.56 to 2.9 µA in the P_up state under a magnetic field of 33 mT, and increases from 1.41 to 4.93 µA in the P_down state under a magnetic field of 42 mT and at a drain voltage of 3 V. The current on/off ratios in these states are 330% and 432%, respectively. This work provides a novel noncontact coupling method among magnetism, piezoelectricity, and semiconductor properties, which may have extremely important applications in magnetic sensors, memory and logic devices, micro-electromechanical systems, and human–machine interfacing.

Magnetic-induced-piezopotential gated field-effect transistor consists of rare-earth Terfenol-D (Tb_xDy_(1−x)Fe alloys), ferroelectric single crystal [Pb(Mn_1/3Nb_2/3)O₃]_(1−x)-[PbTiO₃]_x, and 2D MoS₂ flake, and realizes the magnetic field modulating carrier transport of the MoS₂ flake instead of the gate voltage. This laminate composite device provides a new method for magnetic field tuning semiconductor properties besides spintronics.

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