Atomic Layer Deposition of Rhenium Disulfide

Abstract

2D materials research is advancing rapidly as various new "beyond graphene" materials are fabricated, their properties studied, and materials tested in various applications. Rhenium disulfide is one of the 2D transition metal dichalcogenides that has recently shown to possess extraordinary properties such as that it is not limited by the strict monolayer thickness requirements. The unique inherent decoupling of monolayers in ReS₂ combined with a direct bandgap and highly anisotropic properties makes ReS₂ one of the most interesting 2D materials for a plethora of applications. Here, a highly controllable and precise atomic layer deposition (ALD) technique is applied to deposit ReS₂ thin films. Film growth is demonstrated on large area (5 cm × 5 cm) substrates at moderate deposition temperatures between 120 and 500 °C, and the films are extensively characterized using field emission scanning electron microscopy/energy-dispersive X-ray spectroscopy, X-ray diffractometry using grazing incidence, atomic force microscopy, focused ion beam/transmission electron microscopy, X-ray photoelectron spectroscopy, and time-of-flight elastic recoil detection analysis techniques. The developed ReS₂ ALD process highlights the potential of the material for applications beyond planar structure architectures. The ALD process also offers a route to an upgrade to an industrial scale.

Growth of rhenium disulfide by atomic layer deposition is studied. ReS₂ is a 2D material that is not limited to the monolayer thickness because of effective decoupling of the monolayers in bulk. The ReS₂ films are deposited from ReCl₅ and H₂S at up to 500 °C, also on a 3D structure, and the films are characterized.

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