Chemical Patterning of High-Mobility Semiconducting 2D Bi2O2Se Crystals for Integrated Optoelectronic Devices

Abstract

Patterning of high-mobility 2D semiconducting materials with unique layered structures and superb electronic properties offers great potential for batch fabrication and integration of next-generation electronic and optoelectronic devices. Here, a facile approach is used to achieve accurate patterning of 2D high-mobility semiconducting Bi₂O₂Se crystals using dilute H₂O₂ and protonic mixture acid as efficient etchants. The 2D Bi₂O₂Se crystal after chemical etching maintains a high Hall mobility of over 200 cm² V⁻¹ s⁻¹ at room temperature. Centimeter-scale well-ordered arrays of 2D Bi₂O₂Se with tailorable configurations are readily obtained. Furthermore, integrated photodetectors based on 2D Bi₂O₂Se arrays are fabricated, exhibiting excellent air stability and high photoresponsivity of ≈2000 A W⁻¹ at 532 nm. These results are one step towards the practical application of ultrathin 2D integrated digital and optoelectronic circuits.

Controlled patterning of high-mobility semiconducting two-dimensional Bi₂O₂Se crystals was achieved by a facile wet-chemical etching approach using diluted H₂O₂/protonic acid etchants. Centimeter-scale well-ordered two-dimensional Bi₂O₂Se arrays exhibit a high Hall mobility of over 200 cm² V⁻¹ s⁻¹ at room temperature, and are integrated into air-stable photodetectors with an ultrahigh photoresponsivity of ≈2000 A W⁻¹ at 532 nm.

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