Nanoporous Materials: Controllable Organic Resistive Switching Achieved by One-Step Integration of Cone-Shaped Contact (Adv. Mater. 35/2017)

The understanding of the growth kinetics of conductive filaments in soft polymers is crucial to achieve controllable and reliable resistive random access memory (RRAM). A simple solution-processed and cone-shaped contact method is developed by Mingdong Yi, Linghai Xie, Wei Huang, and co-workers in article number 1701333. The nanoscale engineering of a resistance-switching layer opens the possibility of high-performance flexible memory.

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