Si Complies with GaN to Overcome Thermal Mismatches for the Heteroepitaxy of Thick GaN on Si

Heteroepitaxial growth of lattice mismatched materials has advanced through the epitaxy of thin coherently strained layers, the strain sharing in virtual and nanoscale substrates, and the growth of thick films with intermediate strain-relaxed buffer layers. However, the thermal mismatch is not completely resolved in highly mismatched systems such as in GaN-on-Si. Here, geometrical effects and surface faceting to dilate thermal stresses at the surface of selectively grown epitaxial GaN layers on Si are exploited. The growth of thick (19 µm), crack-free, and pure GaN layers on Si with the lowest threading dislocation density of 1.1 × 10⁷ cm⁻² achieved to date in GaN-on-Si is demonstrated. With these advances, the first vertical GaN metal–insulator–semiconductor field-effect transistors on Si substrates with low leakage currents and high on/off ratios paving the way for a cost-effective high power device paradigm on an Si CMOS platform are demonstrated

Thick (19 µm), crack-free, and pure GaN-on-Si is achieved by strain engineering and metal–organic chemical vapor deposition. A record-low threading dislocation density of 1.1 × 10⁷ cm⁻² and vertical trench-gate normally off metal–insulator–semiconductor field-effect transistor are achieved for the first time in GaN-on-Si.

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