Organic Ferroelectric-Based 1T1T Random Access Memory Cell Employing a Common Dielectric Layer Overcoming the Half-Selection Problem

Organic electronics based on poly(vinylidenefluoride/trifluoroethylene) (P(VDF-TrFE)) dielectric is facing great challenges in flexible circuits. As one indispensable part of integrated circuits, there is an urgent demand for low-cost and easy-fabrication nonvolatile memory devices. A breakthrough is made on a novel ferroelectric random access memory cell (1T1T FeRAM cell) consisting of one selection transistor and one ferroelectric memory transistor in order to overcome the half-selection problem. Unlike complicated manufacturing using multiple dielectrics, this system simplifies 1T1T FeRAM cell fabrication using one common dielectric. To achieve this goal, a strategy for semiconductor/insulator (S/I) interface modulation is put forward and applied to nonhysteretic selection transistors with high performances for driving or addressing purposes. As a result, high hole mobility of 3.81 cm² V⁻¹ s⁻¹ (average) for 2,6-diphenylanthracene (DPA) and electron mobility of 0.124 cm² V⁻¹ s⁻¹ (average) for N,N′-1H,1H-perfluorobutyl dicyanoperylenecarboxydiimide (PDI-FCN₂) are obtained in selection transistors. In this work, we demonstrate this technology's potential for organic ferroelectric-based pixelated memory module fabrication.

A novel ferroelectric random access memory cell (1T1T FeRAM cell) consisting of one selection transistor and one ferroelectric memory transistor is developed. A strategy for interface modulation is effectively applied to the selection transistor to result in both high performance p-type and n-type organic field-effect transistors (OFETs). This work presents great potential for simplified fabrication of pixelated organic ferroelectric memory.

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