The in-air oxidation of TMDs presents an obstacle in many practical device applications. As described in article number 1603898 by Eui-Hyeok Yang and co-workers. WS2/graphene heterostructures on a SiO2 substrate show a very slow oxidation rate, since the graphene layer reduces the effect of surface electric-fields, resulting in significantly suppressed oxidation of WS2/graphene on a SiO2 substrate. Suspended WS2/graphene heterostructures are not oxidized in air, which is attributed to the absence of electric-fields.
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