A Strategy to Design High-Density Nanoscale Devices utilizing Vapor Deposition of Metal Halide Perovskite Materials

The demand for high memory density has increased due to increasing needs of information storage, such as big data processing and the Internet of Things. Organic–inorganic perovskite materials that show nonvolatile resistive switching memory properties have potential applications as the resistive switching layer for next-generation memory devices, but, for practical applications, these materials should be utilized in high-density data-storage devices. Here, nanoscale memory devices are fabricated by sequential vapor deposition of organolead halide perovskite (OHP) CH₃NH₃PbI₃ layers on wafers perforated with 250 nm via-holes. These devices have bipolar resistive switching properties, and show low-voltage operation, fast switching speed (200 ns), good endurance, and data-retention time >10⁵ s. Moreover, the use of sequential vapor deposition is extended to deposit CH₃NH₃PbI₃ as the memory element in a cross-point array structure. This method to fabricate high-density memory devices could be used for memory cells that occupy large areas, and to overcome the scaling limit of existing methods; it also presents a way to use OHPs to increase memory storage capacity.

Utilizing sequential vapor deposition, a CH₃NH₃PbI₃-based nanoscale memory device that uses 250 nm via-hole structures and a CH₃NH₃PbI₃-based cross-point array structure is demonstrated. The CH₃NH₃PbI₃-based nanoscale resistive switching random access memory (ReRAM) shows fast switching speed, low operation voltage, good endurance, and long data retention. The proposed method paves the way for fabricating organic–inorganic perovskite-based nanoscale memories with complementary metal-oxide semiconductor (CMOS) compatibility.

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