Surface Engineering for Extremely Enhanced Charge Separation and Photocatalytic Hydrogen Evolution on g-C3N4

Abstract

Reinforcing the carrier separation is the key issue to maximize the photocatalytic hydrogen evolution (PHE) efficiency of graphitic carbon nitride (g-C₃N₄). By a surface engineering of gradual doping of graphited carbon rings within g-C₃N₄, suitable energy band structures and built-in electric fields are established. Photoinduced electrons and holes are impelled into diverse directions, leading to a 21-fold improvement in the PHE rate.

A facial surface engineering strategy of gradual doping of C_gra rings at different depths to surface in g-C₃N₄ is presented. Suitable energy band layouts and built-in electric fields drastically accelerate carrier separation by impelling photoinduced electrons and holes into diverse directions, and hence elevate the photocatalytic hydrogen evolution rate by 21-fold.

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