Single-Electron Transistors: Bottom-Up Single-Electron Transistors (Adv. Mater. 42/2017)

In article number 1702920, Ksenia S. Makarenko, Zhihua Liu, Wilfred G. van der Wiel, and co-workers present single-electron transistors (SETs) that are fabricated by a novel bottomup approach. The SETs are based on the self-assembly of a single Au nanoparticle between two Au nanorods prior to deposition on a substrate. Individual assemblies are contacted to source and drain contacts and electrostatically tuned by a back-gate electrode, and exhibit high-quality single-electron transport characteristics.

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