Memristors: A High-On/Off-Ratio Floating-Gate Memristor Array on a Flexible Substrate via CVD-Grown Large-Area 2D Layer Stacking (Adv. Mater. 44/2017)

A highly reliable memristor array using floating-gate memory operated by two terminals (source and drain) using van der Waals' layered materials is demonstrated by Young Hee Lee, Woo Jong Yu, and co-workers in article number 1703363. Centimeter-scale samples with MoS₂ as a channel and graphene as a trap layer grown by chemical vapor deposition are used for array fabrication, with Al₂O₃ as a tunneling barrier. This work opens up the possibility to realize reliable and flexible memristors.

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