Nanoscale manipulation of materials' properties offers the clear possibility of developing novel electronic devices. In article number 1702162, Gang Liu, Xiao-Hong Xu, Run-Wei Li, and co-workers present the construction of 1D VO2 nanochannels via electric-field-induced ion transport, showing a superior metal–insulator transition with fast speed, low power, and excellent reproducibility. The VO2 nanostructure acts as promising candidate for the selector element in high-density crossbar memory arrays.
http://ift.tt/2ylrnNj
Δεν υπάρχουν σχόλια:
Δημοσίευση σχολίου
Σημείωση: Μόνο ένα μέλος αυτού του ιστολογίου μπορεί να αναρτήσει σχόλιο.