Abstract
Solution-grown films of CsPbBr3 nanocrystals imbedded in Cs4PbBr6 are incorporated as the recombination layer in light-emitting diode (LED) structures. The kinetics at high carrier density of pure (extended) CsPbBr3 and the nanoinclusion composite are measured and analyzed, indicating second-order kinetics in extended and mainly first-order kinetics in the confined CsPbBr3, respectively. Analysis of absorption strength of this all-perovskite, all-inorganic imbedded nanocrystal composite relative to pure CsPbBr3 indicates enhanced oscillator strength consistent with earlier published attribution of the sub-nanosecond exciton radiative lifetime in nanoprecipitates of CsPbBr3 in melt-grown CsBr host crystals and CsPbBr3 evaporated films.
Photoluminescence and electroluminescence in solution-grown films of CsPbBr3 nanocrystals imbedded in Cs4PbBr6 are studied. Radiative recombination kinetics are second order in bulk CsPbBr3 and first order in CsPbBr3 nanoinclusions. Exciton absorption strength and sub-nanosecond lifetime imply enhanced oscillator strength in the confined form. A semiconductor that is dark in bulk lights up as a highly efficient and fast nanocomposite light emitter.
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