Alloying/doping in 2D material is important due to wide range bandgap tunability. Increasing the number of components would increase the degree of freedom which can provide more flexibility in tuning the bandgap and also reduces the growth temperature. Here, synthesis of quaternary alloys MoxW1−xS2ySe2(1−y) is reported using chemical vapor deposition. The composition of alloys is tuned by changing the growth temperatures. As a result, the bandgap can be tuned which varies from 1.61 to 1.85 eV. The detailed theoretical calculation supports the experimental observation and shows a possibility of wide tunability of bandgap.
Increasing the number of components in transition metal dichalcogenides can result in broad range of bandgap tuning. The authors have synthesized four (quaternary) (MoW
S
Se) component alloys of different compositions by changing the precursors and the temperature used in chemical vapor deposition. The bandgap is tuned from 1.61 to 1.85 eV.
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